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INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V
The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of �20V
- On resistance Rds(on) of 75mohm at Vgs 10V
- Power dissipation Pd of 214W at 25�C
- Continuous drain current Id of 30A at Vgs 10V and 25�C
- Operating junction temperature range from -55�C to 175�C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product details
| Power Dissipation Pd | 214W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 30A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 200V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247AC |
| On Resistance Rds(on) | 0.075ohm |
| MSL | - |
Other details
| Brand | INFINEON |
| Part Number | IRFP250NPBF |
| Quantity | Each |
| Technical Data Sheet EN |  |
|
|
| Application Note EN | |
| Product Change Notice EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$1.59
Original: $5.29
-70%INFINEON IRFP250NPBF MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V, 4 V—
$5.29
$1.59Product Information
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Description
The IRFP250NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of �20V
- On resistance Rds(on) of 75mohm at Vgs 10V
- Power dissipation Pd of 214W at 25�C
- Continuous drain current Id of 30A at Vgs 10V and 25�C
- Operating junction temperature range from -55�C to 175�C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product details
| Power Dissipation Pd | 214W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 30A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 200V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247AC |
| On Resistance Rds(on) | 0.075ohm |
| MSL | - |
Other details
| Brand | INFINEON |
| Part Number | IRFP250NPBF |
| Quantity | Each |
| Technical Data Sheet EN | |
|
|
| Application Note EN | |
| Product Change Notice EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
